Current Issue : July - September Volume : 2021 Issue Number : 3 Articles : 5 Articles
A split‐gate metal–oxide–semiconductor field‐effect transistor (SG‐DMOSFET) is a wellknown structure used for reducing the gate–drain capacitance (CGD) to improve switching characteristics. However, SG‐DMOSFETs have problems such as the degradation of static characteristics and a high gate‐oxide electric field....................
In this study, we propose a 5-bit X-band gallium nitride (GaN) high electron mobility transistor (HEMT)-based phased shifter monolithic microwave integrated circuit for a phased-array technique.....................
The pill-box window is one of the important components of microwave vacuum electronic devices (VEDs), and research into it is of great significance. As the operating frequency increases, the problems associated with the reduction in the structure size include the reduction of the brazing plane and the reduction in the tolerance of the pill-box window. These problems will cause traditional pill-box windows to be unsuitable in high-frequency bands, especially in terahertz and sub-terahertz regions.............
The Cascaded Connected Single Switch Quadratic Boost (C2S2-QB) is studied first from its ideal model, then with semi-real model taking into account resistive losses through the inductors and the capacitor. The continuous conduction mode equations, describing these different models are established, taking into account losses through passive components. From these equations, the voltage gain and the efficiency are determined for the semi-real model.............
In this study, we proposed a rectifying drain electrode that was embedded in a p‐GaN gate AlGaN/GaN heterojunction field‐effect transistor to achieve the unidirectional switching characteristics, without the need for a separate reverse blocking device or an additional process step. The rectifying drain electrode was implemented while using an embedded p‐GaN gating electrode that was placed in front of the ohmic drain electrode. The embedded p‐GaN gating electrode and the ohmic drain electrode are electrically shorted to each other....
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